[1]伍凤娟,刘树林,杨 波.基于Verilog-A语言的霍尔元件仿真模型的建立[J].西安科技大学学报,2018,(01):168-174.[doi:10.13800/j.cnki.xakjdxxb.2018.0124]
 WU Feng-juan,LIU Shu-lin,YANG Bo.Establishment of hall-element simulationmodel based on Verilog-A language[J].Journal of Xi'an University of Science and Technology,2018,(01):168-174.[doi:10.13800/j.cnki.xakjdxxb.2018.0124]
点击复制

基于Verilog-A语言的霍尔元件仿真模型的建立(/HTML)
分享到:

西安科技大学学报[ISSN:1672-9315/CN:61-1434/N]

卷:
期数:
2018年01期
页码:
168-174
栏目:
出版日期:
2018-01-15

文章信息/Info

Title:
Establishment of hall-element simulationmodel based on Verilog-A language
文章编号:
1672-9315(2018)01-0168-07
作者:
伍凤娟刘树林杨 波
西安科技大学 电气与控制工程学院,陕西 西安 710054
Author(s):
WU Feng-juanLIU Shu-linYANG Bo
College of Electrical and Control Engineering,Xi'an University of Science and Technology,Xi'an 710054,China
关键词:
霍尔元件 集成电路 Verilog-A语言 仿真模型
Keywords:
hall element integrated circuit Verilog-A language simulation model
分类号:
TP 212
DOI:
10.13800/j.cnki.xakjdxxb.2018.0124
文献标志码:
A
摘要:
在霍尔集成电路及霍尔传感器设计中,霍尔元件模型的建立直接决定该设计的精度。通过对霍尔元件的深入分析,与传统的四电阻惠斯通电桥模型、基本单元数量可缩比的精确仿真模型、等效集总电阻模型等相关霍尔元件模型进行比较,提出了一种精确改进的仿真模型。该仿真模型由8个电阻、4个反偏二极管、4个电流控制电压源和4个JFET组成。其中,八电阻网络可以更好地反映电流流动,4个反偏二极管用于表示霍尔元件的寄生效应,4个电流控制电压源用来模拟磁场和霍尔电压的关系,4个JFET可以有效提高霍尔元件的交流特性。该模型充分考虑了各种物理效应及寄生效应的影响,采用硬件描述语言Verilog-A实现,非常适合在Cadence Spectre环境下对霍尔元件及整个霍尔集成电路进行仿真分析。实验结果表明:该模型仿真精度高、结构简单、易于实现。
Abstract:
In the Hall integrated circuit and Hall sensor design,the Hall element model directly determines the accuracy of the design.Through in-depth analysis of the Hall element,and compared with the traditional four-resistance wheatstone bridge model,the exact simulation model of the reducednumber of basic units,the equivalent lumped-resistance model and other relevant hall component models,a precise and improved simulation model is put forward.The simulation model consists of eight resistors,four reverse-biased diodes,four current-controlled voltage sources and four JFETs.Among them,eight resistance networks can better reflect current flow,four anti-bias diodes are used to represent the parasitic effects of hall elements,four current control voltage sources are used to simulate the relationship between magnetic field and hall voltage,and four JFETs can effectively improve the AC characteristics of hall elements.Taking full account of the effects of various physical and parasitic effects,it has been written in hardware description language Verilog-A and is very suitable for the simulation analysis of the Hall element and the entire Hall integrated circuit in the cadence spectre environment.The experimental results show that the model has high precision,simple structure and easy implementation.

参考文献/References:

[1] 徐 跃.高灵敏度的CMOS霍尔磁场传感器芯片设计[J].仪表技术与传感器,2009(12):14-16. XU Yue.Design of high sensitive CMOS monolithic magnetic hall sensor[J].Instrument Technique and Sensor,2009(12):14-16.
[2] 何秋阳,徐 跃,赵菲菲.十字型CMOS集成霍尔传感器的简化仿真模型[J].仪表技术与传感器,2011(10):13-15. HE Qiu-yang,XU Yue,ZHAO Fei-fei.Simplified simulation model for cross-shaped CMOS integrated hall sensor[J].Instrument Technique and Sensor,2011(10):13-15.
[3] 黄海云.CMOS单片集成3D霍尔磁传感器研究与设计[D].大连:大连理工大学,2016. HUANG Hai-yun.Research and design of CMOS monolithic integrated 3D hall magnetic sensor[D].Dalian:Dalian University of Technology,2016.
[4] 朱振铎.高灵敏度片上水平霍尔传感器[D].南京:南京大学,2015. ZHU Zhen-duo.A high sensitivity on-chip horizontal hall sensor[D].Nangjing: Nangjing University,2015.
[5] 张 浩.霍尔集成电路设计及其测试系统的研发[D].兰州:兰州大学,2010. ZHAGN Hao.The design of hall IC and the R&D of hall sensor testing apparatus[D].Lanzhou: Lanzhou University,2010.
[6] Dimitrov K.3-D silicon hall sensor for use in magnetic-based navigation systems for endovascular interventions[J].Measurement,2007,40:816-822.
[7] Xu Y,Zhao F F.A simplified simulation model for CMOS integrated Hall devices working atlow magnetic field circumstance[C]//In Proceedings of the 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(ICSICT),Shanghai,2010:1925-1927.
[8] Xu Y,Pan H B.An improved equivalent simulation model for CMOS integrated hall plates[J].Sensors,2011,11(6):6284-6296.
[9] 杨 波,杨银堂,孙龙杰,等.基于Verilog-A的容栅传感器建模与仿真[J].电子器件,2005(4):871-874. YANG Bo,YANG Yin-tang,SUN Long-jie,et al.Modeling and simulation of capacitive gate transducer using Verilog-A[J].Chinese Journal of Electron Devices,2005(4):871-874.
[10]Vasyukov D A,Plaut A S,Henini M,et al.Intrinsic photoinduced anomalous Hall effect[J].Physica E,Low-dimensional Systems and Nanostructures,2010,42(4): 940-943.
[11]Morgan Madec.An improved compact model of the electrical behaviour of the 5-contact vertical Hall-effect device[J].Analog Integr Circ Sig Process,2014,81:677-691.
[12]徐 俊.一种低失调垂直型霍尔传感器研究与设计[D].南京:南京邮电大学,2017. XU Jun.Research and design of a low offset vertical hall sensor[D].Nanjing: Nanjing University of Posts and Telecommunications,2017.
[13]Schell J B.Hall-effect magnetic tracking device for Magnetic Resonance Imaging[C]//In IEEE Sensors Conference.Baltimore,USA.doi:10.1109/ICSENS.2013.6688475,2012:1382-1385.
[14]吕 飞.单芯片CMOS三维微型霍尔磁传感器研究[D].南京:南京大学,2017. LV Fei.Research on single-chip integrated CMOS 3D micro hall magnetic sensor[D].Nanjing:Nanjing University,2017.
[12]徐 跃,黄海云.一种十字形CMOS霍尔器件的精确仿真模型[J].功能材料与器件学报,2014,20(1):20-26. XU Yue,HUANG Hai-yun.An accurate simulation model for cross-shaped CMOS Hall sensor[J].Journal of Functional Materials And Devices,2014,20(1):20-26.
[16]Madec M,Kammerer J B,Hebrard L,et al.An improved compact model for CMOS cross-shaped Hall-effect sensor including offset and temperature effects[J].Analog Integr Circ Sig Process,2012,73:719-730.
[17]Banjevic M,FurreR B,Blagojevic M.,et al.High-speed CMOS magnetic angle sensor based on miniaturized circular vertical Hall devices[J].Sens.Actuators,2012,178:64-75.
[18]Chang T,Kai-Cheung Juang.CMOS SC-spinning,current-feedback Hall sensor for high speed and low cost applications[C]//In: Proc.of IEEE Sensors conference,2014:527-530.
[19]YUE Hu,WEN Rong-yang.CMOS Hall sensor using dynamic quadrature offset cancellation[C]//In:Solid-State and Integrated Circuilt Technology,2006:284-286.

备注/Memo

备注/Memo:
通信作者:伍凤娟(1989-),女,陕西汉中人,硕士,助理工程师,E-mail:784442816@qq.com
更新日期/Last Update: 2018-03-12