[1]王树奇,吉 才,刘树林.GaN组合开关电路及其驱动技术研究[J].西安科技大学学报,2016,(06):882-887.[doi:10.13800/j.cnki.xakjdxxb.2016.0620]
 WANG Shu-qi,JI Cai,LIU Shu-lin.Driving technology of GaN HEMT and its application[J].Journal of Xi'an University of Science and Technology,2016,(06):882-887.[doi:10.13800/j.cnki.xakjdxxb.2016.0620]
点击复制

GaN组合开关电路及其驱动技术研究()
分享到:

西安科技大学学报[ISSN:1672-9315/CN:61-1434/N]

卷:
期数:
2016年06期
页码:
882-887
栏目:
出版日期:
2016-12-30

文章信息/Info

Title:
Driving technology of GaN HEMT and its application
文章编号:
1672-9315(2016)06-0882-06
作者:
王树奇1吉 才2刘树林3
1.西安科技大学 通信与信息工程学院,陕西 西安 710054;
2.中国移动通信集团山西有限公司,山西 吕梁 033000;
3.西安科技大学 电气与控制工程学院,陕西 西安 710054
Author(s):
WANG Shu-qi1JI Cai2LIU Shu-lin3
1.College of Communication and Information Engineering,Xi'an University of Science and Technology,Xi'an 710054,China;
2.China Mobile Communications Group Shanxi Ltd.,Lvliang,033000,China;
3.College of Electrical and Control Engineering,Xi'an University of Science and Technology,Xi'an 710054,China
关键词:
氮化镓 高电子迁移率场效应晶体管 耗尽型 驱动电路 开关变换器
Keywords:
GaN HEMT depletion-mode driving circuit switching power supply
分类号:
TM 46
DOI:
10.13800/j.cnki.xakjdxxb.2016.0620
文献标志码:
A
摘要:
基于氮化镓的高电子迁移率场效应晶体管(GaN HEMT)具有电子迁移率高、耐高温和极低的寄生电容等诸多特点而成为开关变换器领域关注的焦点。限于目前的制造工艺,基于氮化镓材料的MOS开关器件更容易做成耗尽型,针对耗尽型GaN HEMT器件的负电压关断特性,结合其应用于开关变换器的上电短路问题,提出一种GaN HEMT器件与增强型MOSFET的组合开关电路,可实现对耗尽型GaN HEMT器件的开、关控制及可靠关断,但其关断速度不够快。为此,提出一种快速关断GaN HEMT器件的驱动电路,并得到了进一步提高GaN HEMT器件开关速度的改进电路,可实现对耗尽型GaN HEMT器件快速可靠关断。实例及实验结果验证了所提出电路的可行性。
Abstract:
GaN HEMT is the focus of the switching power supply due to its high mobility,high temperature and low parasitic capacitance.Limited to the fabrication process,the GaN switching device only can be made to depletion-mode switching device.Aimed at the negative voltage turn-off characteristic and the short-circuit problem of the depletion-mode GaN HEMT device,a combination switch with GaN HEMT and enhanced MOSFET is proposed,the turn-on and turn-off control for the depletion-mode GaN HEMT device can be realized,the GaN HEMT device can be turned off reliably,but the tutn-off speed is not fast.Thus,the drive circuit of the GaN HEMT device is proposed,an improved circuit for increasing the tutn-off speed of the GaN HEMT device can be obtained,and fast and reliable turn-off for the Depletion-mode GaN device can be realized.Experiments results show the feasibility of the proposed circuit.

参考文献/References:

[1] 张 波,邓小川,陈万军,等.宽禁带功率半导体器件技术[J].电子科技大学学报,2009,38(5):618-623. ZHANG Bo,DENG Xiao-chuan,CHEN Wan-jun,et al.Wide bandgap semiconductors for power electronics[J].Journal of University of Electronic Science and Technology of China,2009,38(5):618-623.
[2] 陈治明.宽禁带半导体电力电子器件研发新进展[J].电力电子技术,2009,43(11):618-623. CHEN Zhi-ming.Research progress of wide bandgap semiconductors power electronic device[J].Power Electronics,2009,43(11):618-623.
[3] 郝 跃,张金风,张进成,等.氮化物半导体电子器件新进展[J].科学通报,2015,60(10):874-881. HAO Yue,ZHANG Jin-feng,ZHANG Jin-cheng,et al.Progress in nitride semiconductor electronic devices[J].ChineseScience Bulletin,2015,60(10):874-881.
[4] 李明月.面向高速应用的GaN基HEMT器件[J].电子工业专用设备,2015(4):1-6. LI Ming-yue.GaN-Based HEMT devices for high speed applications[J].Equipment for Electronic Products Manufacturing,2015(4):1-6.
[5] 赵正平.GaN功率开关器件的发展与微尺度功率变换[J].半导体技术,2014,39(2):81-87. ZHAO Zheng-ping.Development of the GaN power switch device and microscale power conversion[J].Semiconductor Technology,2014,39(2):81-87.
[6] 李 迪,贾利芳,何 志.GaN基SBD功率器件研究进展[J].微纳电子技术,2014,51(5):277-296. LI Di,JIA Li-fang,HE Zhi.Research progresses on GaN-based schottky barrier diode power devices[J].Micronanoelectronic Technology,2014,51(5):277-296.
[7] 任小永,David Reusch.氮化镓功率晶体管三电平驱动技术[J].电工技术学报,2013,28(5):203-207. REN Xiao-yong,David Reusch.Three-level driving method for GaN power transistor[J].Transactions ofChina Electrotechnical Society,2013,28(5):203-207.
[8] 刘树林,刘 健.开关变换器分析与设计[M].北京:机械工业出版社,2011. LIU Shu-lin,LIU Jian.Analysis and design of switching converters[M].Beijing:China Machine Press,2011.
[9] Saito W,Takada Y,Kuraguchi M.High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior[J].IEEE Trans.Electron Devices,2003,50(12):2 528-2 531.
[10]Huang W,Chow T P,NIiyama Y,et al.Lateral implanted RESURF GaN MOSFETs with BV upto 2.5 kV[C]//Proceedings of the 20 International Symposium on Power Semiconductor Devices & IC's.Orlando,FL; IEEE,2008:291-294.
[11]WU Yi-feng,Matt Jacob-Mitos,Marcia L,et al.A 97.8% Effi cient GaN HEMT boost converter with 300 W output power at 1 MHz[J].IEEE Electron Device Letters,2008,29(8):824-826.
[12]Tetsu Kachi.GaN power device for automotive applications[J].Proceedings of Asia-Pacific Microwave Conference,2014:923-925.
[13]HUANG Xiu-cheng,LI Qiang.Analytical loss model of high voltage GaN HEMT in cascode configuration[J].IEEE Transactions on Power Electronics,2014,29(5):2 208-2 219.
[14]于 宁,王红航,刘飞飞,等.GaN HEMT器件结构的研究进展[J].发光学报,2015,36(10):1 178-1 187. YU Ning,WANG Hong-hang,LIU Fei-fei,et al.Research progress of GaN HEMT device structure[J].Chinese Journal of Luminescence,2015,36(10):1 178-1 187.
[15]刘树林,祁俐俐.Buck变换器的等效简单电感电路及内部本安判据[J].西安科技大学学报,2015,35(3):95-100. LIU Shu-lin,QI Li-li.Equivalent simple-inductive-circuit and inner-intrinsic safety criterion of buck converter[J].Journal of Xi'an University of Science and Technology,2015,35(3):95-100.

备注/Memo

备注/Memo:
收稿日期:2016-07-10 责任编辑:高 佳
基金项目:陕西省科学技术研究发展计划(2015SF279)
通讯作者:王树奇(1974-),男,陕西大荔人,副教授,E-mail:wangshuqi@xust.edu.cn
更新日期/Last Update: 2016-11-28