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Driving technology of GaN HEMT and its application(PDF)

西安科技大学学报[ISSN:1672-9315/CN:61-1434/N]

Issue:
2016年06期
Page:
882-887
Research Field:
Publishing date:

Info

Title:
Driving technology of GaN HEMT and its application
Author(s):
WANG Shu-qi1JI Cai2LIU Shu-lin3
1.College of Communication and Information Engineering,Xi'an University of Science and Technology,Xi'an 710054,China;
2.China Mobile Communications Group Shanxi Ltd.,Lvliang,033000,China;
3.College of Electrical and Control Engineering,Xi'an University of Science and Technology,Xi'an 710054,China
Keywords:
GaN HEMT depletion-mode driving circuit switching power supply
PACS:
TM 46
DOI:
10.13800/j.cnki.xakjdxxb.2016.0620
Abstract:
GaN HEMT is the focus of the switching power supply due to its high mobility,high temperature and low parasitic capacitance.Limited to the fabrication process,the GaN switching device only can be made to depletion-mode switching device.Aimed at the negative voltage turn-off characteristic and the short-circuit problem of the depletion-mode GaN HEMT device,a combination switch with GaN HEMT and enhanced MOSFET is proposed,the turn-on and turn-off control for the depletion-mode GaN HEMT device can be realized,the GaN HEMT device can be turned off reliably,but the tutn-off speed is not fast.Thus,the drive circuit of the GaN HEMT device is proposed,an improved circuit for increasing the tutn-off speed of the GaN HEMT device can be obtained,and fast and reliable turn-off for the Depletion-mode GaN device can be realized.Experiments results show the feasibility of the proposed circuit.

References:

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Last Update: 2016-11-28